LOGO
Total0Items      Cart Subtotal:$0
LOGO
MJE200G
MJE200GReference image

Images are for reference only

Mfr. #:
MJE200G
Mfr.:
Batch:
new
Description:
Transistor - Bipolar (BJT) - Single NPN 40 V 5 A 65MHz 15 W Through Hole TO-126
Datasheet:
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
frequently asked question
Product AttributeAttribute Value
onsemi
Series -
Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation Voltage Drop (Max) 1.8V @ 1A, 5A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) 45 @ 2A, 1V
Power - Max 15 W
Frequency - Transition 65MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-225AA, TO-126-3
Supplier Device Package TO-126
Other product information

Advantage price,MJE200G in stock can be shipped on the same day

In Stock: 6536
Qty.Unit PriceExt. Price
1+ $1.1708 $1.1708
10+ $1.0165 $10.165
500+ $0.5880 $294
1000+ $0.5004 $500.4
5000+ $0.4222 $2111
10000+ $0.3909 $3909
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
6536
Minimum:
1
MPQ:
1
Multiples:
1
Copyright © 2020-2025 Ongiami Technology