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2N5551YBU
2N5551YBUReference image

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Mfr. #:
2N5551YBU
Mfr.:
Batch:
new
Description:
Transistor - Bipolar (BJT) - Single NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
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Transistor Type NPN
Current - Collector (Ic) (Maximum) 600 mA
Voltage - Collector-Emitter Breakdown (Maximum) 160 V
Vce Saturation Voltage Drop (Maximum) 200mV @ 5mA, 50mA
Current - Collector Cutoff (Maximum) -
DC Current Gain (hFE) (Minimum) 180 @ 10mA, 5V
Power - Maximum 625 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 Standard Body (!--TO-226AA)
Supplier Device Package TO-92-3
2N5551
Other product information

Advantage price,2N5551YBU in stock can be shipped on the same day

In Stock: 19920
Qty.Unit PriceExt. Price
1+ $0.4852 $0.4852
10+ $0.3286 $3.286
100+ $0.1604 $16.04
1000+ $0.0929 $92.9
5000+ $0.0747 $373.5
10000+ $0.0620 $620
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
19920
Minimum:
1
MPQ:
1
Multiples:
1
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