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MPSH10RLRAG
MPSH10RLRAGReference image

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Mfr. #:
MPSH10RLRAG
Mfr.:
Batch:
new
Description:
RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92 (TO-226)
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Manufacturer onsemi
Series -
Packaging Tape and Reel (TR)
Transistor Type NPN
Voltage - Collector-Emitter Breakdown (max) 25V
Frequency - Transition 650MHz
Noise Figure (dB, typ. at f) -
Gain -
Power - max 350mW
DC Current Gain (hFE) (min) at ?Ic, Vce? 60 @ 4mA, 10V
Current - Collector (Ic) (max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-226-3, TO-92-3 Long body (formed leads)
Supplier device package TO-92 (TO-226)
Other product information

Advantage price,MPSH10RLRAG in stock can be shipped on the same day

In Stock: Inquiry
Qty.Unit PriceExt. Price
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Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
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Minimum:
1
MPQ:
Multiples:
1
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